Contactless mapping of mesoscopic resistivity variations in semi-insulating substrates
| Autor: | M. Wickert, P. Hiesinger, W. Jantz, R. Stibal |
|---|---|
| Přispěvatelé: | Publica |
| Rok vydání: | 1999 |
| Předmět: |
Widerstand
Materials science Capacitive sensing kontaktlose Messung mesoskopisch Analytical chemistry High resolution substrate Point contact topography Electrical resistivity and conductivity Homogeneity (physics) General Materials Science Statistical analysis mapping semi-insulating Rasterung Mesoscopic physics contactless measurement Condensed matter physics Mechanical Engineering GaAs semiisolierend Condensed Matter Physics mesoscope resistivity Mechanics of Materials Semi insulating |
| Zdroj: | Materials Science and Engineering: B. 66:21-25 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/s0921-5107(99)00094-x |
| Popis: | The lateral homogeneity of the electrical resistivity p of semi-insulating GaAs substrates is measured with high resolution using contactless capacitive mapping. The improved technique is capable of imaging mesoscopic p fluctuations correlated with the cellular structure of the dislocation density. The results compare favorably with data obtained by point contact topography. A rneasurement and statistical analysis procedure is described that allows an individual evaluation of the macro- and mesocopic contributions to the total on-wafer p variation. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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