Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center
Autor: | Evelyn L. Hu, Xingyu Zhang, David O. Bracher |
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Rok vydání: | 2017 |
Předmět: |
Materials science
Silicon Phonon FOS: Physical sciences Physics::Optics chemistry.chemical_element Nanotechnology 02 engineering and technology 01 natural sciences Carbide chemistry.chemical_compound Vacancy defect Mesoscale and Nanoscale Physics (cond-mat.mes-hall) 0103 physical sciences Silicon carbide 010306 general physics Quantum information science Photonic crystal Quantum Physics Multidisciplinary Condensed Matter - Mesoscale and Nanoscale Physics business.industry Quantum sensor 021001 nanoscience & nanotechnology chemistry Physical Sciences Optoelectronics Quantum Physics (quant-ph) 0210 nano-technology business Optics (physics.optics) Physics - Optics |
Zdroj: | Proceedings of the National Academy of Sciences. 114:4060-4065 |
ISSN: | 1091-6490 0027-8424 |
DOI: | 10.1073/pnas.1704219114 |
Popis: | Point defects in silicon carbide are rapidly becoming a platform of great interest for single photon generation, quantum sensing, and quantum information science. Photonic crystal cavities (PCC) can serve as an efficient light-matter interface both to augment the defect emission and to aid in studying the defects' properties. In this work, we fabricate 1D nanobeam PCCs in 4H-silicon carbide with embedded silicon vacancy centers. These cavities are used to achieve Purcell enhancement of two closely spaced defect zero-phonon lines (ZPL). Enhancements of >80-fold are measured using multiple techniques. Additionally, the nature of the cavity coupling to the different ZPLs is examined. 15 pages, 5 figures |
Databáze: | OpenAIRE |
Externí odkaz: |
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