Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center

Autor: Evelyn L. Hu, Xingyu Zhang, David O. Bracher
Rok vydání: 2017
Předmět:
Zdroj: Proceedings of the National Academy of Sciences. 114:4060-4065
ISSN: 1091-6490
0027-8424
DOI: 10.1073/pnas.1704219114
Popis: Point defects in silicon carbide are rapidly becoming a platform of great interest for single photon generation, quantum sensing, and quantum information science. Photonic crystal cavities (PCC) can serve as an efficient light-matter interface both to augment the defect emission and to aid in studying the defects' properties. In this work, we fabricate 1D nanobeam PCCs in 4H-silicon carbide with embedded silicon vacancy centers. These cavities are used to achieve Purcell enhancement of two closely spaced defect zero-phonon lines (ZPL). Enhancements of >80-fold are measured using multiple techniques. Additionally, the nature of the cavity coupling to the different ZPLs is examined.
15 pages, 5 figures
Databáze: OpenAIRE
načítá se...