Fast deposition of amorphous carbon and silicon layers
| Autor: | Ajm Buuron, GJ Gijs Meeusen, M.C.M. van de Sanden, JJ Beulens, DC Daan Schram |
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| Přispěvatelé: | Plasma & Materials Processing |
| Rok vydání: | 1993 |
| Předmět: |
Nuclear and High Energy Physics
Argon Materials science Silicon Analytical chemistry chemistry.chemical_element Effective nuclear charge Amorphous solid Nuclear Energy and Engineering Amorphous carbon chemistry Deposition (phase transition) General Materials Science Thin film Dissociative recombination |
| Zdroj: | Journal of Nuclear Materials, 200(3), 430-433. Elsevier |
| ISSN: | 0022-3115 |
| DOI: | 10.1016/0022-3115(93)90322-p |
| Popis: | A new plasma deposition technique is described. In this method a high density and strongly flowing argon plasma is admixed with monomers such as CH/sub 4/, C/sub 2/H/sub 2/, SiH/sub 4/, etc. Through effective charge transfer and dissociative recombination the ion charge is transferred to the fully dissociated monomer fragments. As the to be deposited particles as C and Si have low ionization potentials they are preferably recharged. The method results in high deposition rates of a-C:H (up to 100 nm/s) and a-Si:H layers (30 nm/s). Properties of the layers are reviewed and a tentative model for plasma description is discussed |
| Databáze: | OpenAIRE |
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