Direct observation of layer-stacking and oriented wrinkles in multilayer hexagonal boron nitride
Autor: | Yufeng Guo, Haomin Wang, Haifang Cai, Chengxin Jiang, Lingxiu Chen, Wang Huishan, Xiaojing Mu, Kenan Elibol, Chen Chen, Jannik C. Meyer, Wenhao Shi, Kenji Watanabe, Chen Li, Xiujun Wang, Takashi Taniguchi |
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Jazyk: | angličtina |
Rok vydání: | 2021 |
Předmět: |
Condensed Matter - Materials Science
Materials science Physics Mechanical Engineering Stacking Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences General Chemistry Substrate (electronics) Crystal structure Condensed Matter Physics Microstructure Crystal Molecular dynamics Mechanics of Materials Transmission electron microscopy General Materials Science Composite material Layer (electronics) |
Zdroj: | 2D materials |
ISSN: | 2053-1583 |
Popis: | Hexagonal boron nitride (h-BN) has long been recognized as an ideal substrate for electronic devices due to its dangling-bond-free surface, insulating nature and thermal/chemical stability. Therefore, to analyse the lattice structure and orientation of h-BN crystals becomes important. Here, the stacking order and wrinkles of h-BN are investigated by transmission electron microscopy (TEM). It is experimentally confirmed that the layers in the h-BN flakes are arranged in the AA' stacking. The wrinkles in a form of threefold network throughout the h-BN crystal are oriented along the armchair direction, and their formation mechanism was further explored by molecular dynamics simulations. Our findings provide a deep insight about the microstructure of h-BN and shed light on the structural design/electronic modulations of two-dimensional crystals. 7 pages, 5 figures |
Databáze: | OpenAIRE |
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