Reliability of 100 nm silicon nitride capacitors in an InP HEMT MMIC process
| Autor: | Adele E. Schmitz, B.M. Paine, M.J. Delaney, R.H. Walden, W.J. Rowe |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
business.industry Electrical engineering Dielectric High-electron-mobility transistor Condensed Matter Physics Atomic and Molecular Physics and Optics Poole–Frenkel effect Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Capacitor chemistry.chemical_compound Silicon nitride chemistry law Dielectric breakdown model Optoelectronics Wafer Electrical and Electronic Engineering Safety Risk Reliability and Quality business Monolithic microwave integrated circuit |
| Zdroj: | Microelectronics Reliability. 43:845-851 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/s0026-2714(03)00069-6 |
| Popis: | A reliability study has been conducted on capacitors made with 100 nm of silicon nitride, in an InP HEMT MMIC fabrication process. Special wafers were fabricated, containing 1482 200 /spl mu/m/spl times/200 /spl mu/m capacitors each, and these were probed automatically. They were subject to ramped-voltage stress and the breakdown voltages recorded. On a typical wafer the vast majority of the breakdown voltages are between 50 and 90 V. In addition, I-V curves were measured on a small number of specimens from 0 V up to breakdown. This was done in two regimes: above 25 V with a conventional setup, and below 25 V with an ultra-low-current measurement system. These were done at 25/spl deg/C and 175/spl deg/C above 25 V, and at 25/spl deg/C only below 25 V. These were fitted well with a model for the conductivity, consisting of an ohmic conduction at low voltages and Frenkel-Poole conduction at high voltages. Parameters of the fits included thermal activation energies, the voltage acceleration factor in the Frenkel-Poole model, and d/sub eff/, the effective thickness of the dielectric at the thinnest point. Analysis invoked the time-dependent dielectric breakdown model, which provides the time to failure as a function of the deff, while deff can be found from the ramped-voltage measurements. From the 10 wafers that have been probed so far, the mean of the distribution of failure times (at 1.5 V, 40/spl deg/C) is above 5/spl times/10/sup 7/ hrs, and the distribution becomes insignificant below 2/spl times/10/sup 6/ hrs. Further, the probability of failure in 10 years at 1.5 V, 40/spl deg/C is much less than 1 in 14,600. This indicates that 100 nm silicon nitride capacitors in this technology have good reliability. |
| Databáze: | OpenAIRE |
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