A 4mA, 0.25 SiGe, 23GHz BiFET Low Noise Amplifier
| Autor: | Yann Deval, Hervé Lapuyade, Thierry Taris, N. Seller, Jean-Baptiste Begueret, R. Toupe |
|---|---|
| Přispěvatelé: | Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Crolles] (ST-CROLLES), De Matos, Magali |
| Jazyk: | angličtina |
| Rok vydání: | 2006 |
| Předmět: |
business.industry
Computer science [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics 020208 electrical & electronic engineering Electrical engineering 020206 networking & telecommunications 02 engineering and technology Noise figure Low-noise amplifier Bicmos technology Microstrip Current consumption 0202 electrical engineering electronic engineering information engineering Mmic amplifiers Electronic engineering Bicmos integrated circuits Field-effect transistor [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics business ComputingMilieux_MISCELLANEOUS |
| Zdroj: | IEEE International Conference on Electronics, Circuits and Systems, 2006. ICECS '06 IEEE International Conference on Electronics, Circuits and Systems, 2006. ICECS '06, Dec 2006, Nice, France. pp.1019-1022 ICECS |
| Popis: | The full aspects of a 23 GHz BiFET LNA implementation are reported in this work. Integrated in a 0.25 mum BiCMOS technology, the circuit exhibits a 14 dB gain at 22.8 GHz for a 4 mA current consumption under 2.5 V. S11 and S22 parameters are less than -16 dB and -13 dB respectively. A 6.9 dB minimum noise figure is obtained at 22.4 GHz. A large part of the paper also deals with high frequency layout considerations. Indeed useful techniques dedicated to integrated microstrip waveguides and RF interconnections are proposed based on 3D electromagnetic-field simulations. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|