High detection efficiency silicon single-photon detector with a monolithic integrated circuit of active quenching and active reset
| Autor: | Peng-Fei Liao, Jun Zhang, Yu-Qiang Fang, Kai Luo, Pu Pu, Xing-Guo Gao, Jian-Wei Pan, Ang Zhong, Xiao-Hui Bao, Yu-Ao Chen, Gai-Qing Huo |
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| Rok vydání: | 2020 |
| Předmět: |
Physics - Instrumentation and Detectors
Materials science Silicon FOS: Physical sciences chemistry.chemical_element Applied Physics (physics.app-ph) Integrated circuit 01 natural sciences 010305 fluids & plasmas law.invention law 0103 physical sciences Breakdown voltage Instrumentation Diode 010302 applied physics Quenching Quantum Physics business.industry Detector Instrumentation and Detectors (physics.ins-det) Physics - Applied Physics chemistry Optoelectronics Quantum Physics (quant-ph) business Reset (computing) Voltage |
| Zdroj: | The Review of scientific instruments. 91(12) |
| ISSN: | 1089-7623 |
| Popis: | Silicon single-photon detectors (SPDs) are key devices for detecting single photons in the visible wavelength range. Photon detection efficiency (PDE) is one of the most important parameters of silicon SPDs, and increasing PDE is highly required for many applications. Here, we present a practical approach to increase PDE of silicon SPD with a monolithic integrated circuit of active quenching and active reset (AQAR). The AQAR integrated circuit is specifically designed for thick silicon single-photon avalanche diode (SPAD) with high breakdown voltage (250-450 V), and then fabricated via the process of high-voltage 0.35-$\mu$m bipolarCMOS-DMOS. The AQAR integrated circuit implements the maximum transition voltage of ~ 68 V with 30 ns quenching time and 10 ns reset time, which can easily boost PDE to the upper limit by regulating the excess bias up to a high enough level. By using the AQAR integrated circuit, we design and characterize two SPDs with the SPADs disassembled from commercial products of single-photon counting modules (SPCMs). Compared with the original SPCMs, the PDE values are increased from 68.3% to 73.7% and 69.5% to 75.1% at 785 nm, respectively, with moderate increases of dark count rate and afterpulse probability. Our approach can effectively improve the performance of the practical applications requiring silicon SPDs. Comment: 6 pages, 4 figures, accepted for publication in Review of Scientific Instruments |
| Databáze: | OpenAIRE |
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