Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes

Autor: Konstantinos Zekentes, Francis Baillet, Edwige Bano, Alexandre Crisci, Michel Mermoux, Aurelie Thuaire
Přispěvatelé: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Domenget, Chahla, Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut de Microélectronique, Electromagnétisme et Photonique (IMEP), Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF), Laboratoire d'Electrochimie et de Physico-chimie des Matériaux et des Interfaces (LEPMI ), Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Joseph Fourier - Grenoble 1 (UJF)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Laboratoire de thermodynamique et physico-chimie métallurgiques (LTPCM), Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG), Foundation for Research and Technology - Hellas (FORTH)
Rok vydání: 2007
Předmět:
Materials science
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
02 engineering and technology
01 natural sciences
Temperature measurement
Signal
law.invention
symbols.namesake
Optics
law
0103 physical sciences
[SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering
General Materials Science
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Photoemission microscopy
Structural defects
ComputingMilieux_MISCELLANEOUS
Diode
010302 applied physics
business.industry
Mechanical Engineering
PIN diode
[CHIM.MATE]Chemical Sciences/Material chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
Characterization (materials science)
Coupling (electronics)
Semiconductor
Leakage current
Mechanics of Materials
Pin diodes
Raman spectroscopy
symbols
Optoelectronics
0210 nano-technology
business
Zdroj: Mat. Sci. Forum
Mat. Sci. Forum, 2007, 556-557, pp.909-912
Material Science Forum
European Conference on Silicon Carbide and Related Materials
European Conference on Silicon Carbide and Related Materials, 2006, Newcastle upon Tyne, United Kingdom. pp.909-912
HAL
Materials Science Forum
Materials Science Forum, Trans Tech Publications Inc., 2007, 556-557, pp. 909-912. ⟨10.4028/3-908453-69-0.909⟩
ISSN: 1662-9752
0255-5476
1662-9760
DOI: 10.4028/www.scientific.net/msf.556-557.909
Popis: International audience; Raman spectroscopy and photoemission microscopy were coupled as two complementary non-destructive optical techniques in order to study biased 4H-SiC pin diodes. These two characterization tools have been largely used for the study of semiconductors but the combination of these two techniques has hardly been reported so far. Some structural defects inducing the same electrical damage could be discriminated and identified. Temperature could be measured in operating devices and the influence of the diode operating mode on the Raman signal could be evidenced.
Databáze: OpenAIRE
Externí odkaz: