Technology for Obtaining Cu2ZnSnSe4 Thin Films

Autor:	Vjaceslavs Gerbreders, Velga Akmene, Pāvels Narica, I. Mihailova
Jazyk:	angličtina
Rok vydání:	2015
Předmět:	Materials science Scanning electron microscope Annealing (metallurgy) Metallurgy Analytical chemistry chemistry.chemical_element Zinc Atmospheric temperature range Copper chemistry semiconductor Cu2ZnSnSe4 thermal annealing Thin film Tin Stoichiometry
Zdroj:	Environment. Technology. Resources. Proceedings of the International Scientific and Practical Conference; Vol 2 (2013): Environment. Technology. Resources. Proceedings of the 9th International Scientific and Practical Conference. Volume 2; 134-136
ISSN:	1691-5402 2256-070X
Popis:	Cu2ZnSnSe4 thin films were obtained by sequential deposition of basic elements (Sn, Se, Zn, Cu) on a glass substrate. The thickness of each layer was selected to achieve 2:1:1:4 stoichiometric ratio for copper, zinc, tin and selenium, respectively. To obtain compound Cu2ZnSnSe4 samples were annealed at temperature range of 1500C to 4000C. Surface of samples were investigated using scanning electron microscope. Analysis of chemical composition and x-ray diffractometry was performed before and after annealing of samples.
Databáze:	OpenAIRE
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