A Solution Toward the OFF-State Degradation in Drain-Extended MOS Device
| Autor: | V. Ramgopal Rao, Mayank Shrivastava, Ruchil Jain, Maryam Shojaei Baghini, Harald Gossner |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2010 |
| Předmět: |
Engineering
Electrostatic discharge Dielectric strength business.industry Input/Output Electrical engineering Semiconductor device modeling Hardware_PERFORMANCEANDRELIABILITY Band-To-Band Tunnelling (Btbt) Electronic Optical and Magnetic Materials Time-Dependent Dielectric Breakdown (Tddb) Tunnel effect Reliability (semiconductor) Gate oxide Drain Extended Hardware_INTEGRATEDCIRCUITS Optoelectronics Electrical and Electronic Engineering Current (fluid) business Drain-Extended Mos (Demos) Quantum tunnelling Hardware_LOGICDESIGN |
| Zdroj: | IndraStra Global. |
| ISSN: | 2381-3652 |
| Popis: | We investigated the surface band-to-band tunnelling (BTBT) current under the off-state condition in drain-extended MOS (DeMOS) devices. We found significant gate-induced drain leakage current due to surface BTBT, which was also reported earlier as the dominant cause of early time-dependent dielectric breakdown and device failure. Furthermore, a layout solution for the existing DeMOS device is proposed in order to mitigate the surface BTBT current and the associated gate oxide reliability issues, without sacrificing the mixed-signal performance of the device. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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