Etching of m-plane Zn(Mg)O epitaxial films and its impact on surface leakage currents
| Autor: | Gottfried Strasser, Hanh T. Hoang, Maxime Hugues, Jean-Michel Chaveau, Borislav Hinkov |
|---|---|
| Přispěvatelé: | Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA) |
| Rok vydání: | 2021 |
| Předmět: |
[PHYS]Physics [physics]
010302 applied physics Surface (mathematics) Materials science business.industry Plane (geometry) 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Electronic Optical and Magnetic Materials law.invention law Etching (microfabrication) 0103 physical sciences Materials Chemistry Optoelectronics Electrical and Electronic Engineering 0210 nano-technology Quantum cascade laser business ComputingMilieux_MISCELLANEOUS Leakage (electronics) |
| Zdroj: | Semiconductor Science and Technology Semiconductor Science and Technology, IOP Publishing, 2021, 36 (3), pp.035023. ⟨10.1088/1361-6641/abdd07⟩ |
| ISSN: | 1361-6641 0268-1242 |
| Popis: | Zinc oxide is a novel material system for mid-infrared and THz optoelectronics. Especially its non-polar m-plane orientation is a promising candidate for the design of devices like quantum cascade lasers (QCLs) and detectors (QCDs). But for their realization novel fabrication schemes are needed. We present a new inductively coupled plasma reactive ion etching (ICP-RIE) process for etching of m-Zn(Mg)O heterostructures in a CH4-based chemistry. The process has been optimized for smooth vertical sidewalls together with high selectivity towards a SiN etch mask. This was achieved by combining the RIE etching with wet chemical etching in strongly diluted HCl. Similar to various types of semiconductor-based optoelectronic materials and devices (Sidor et al 2016 J. Electron. Mater. 45 4663–7; Ma et al 2016 Opt. Express 24 7823), including other wide-gap semiconductors like (In)GaN (Zhang et al 2015 Nanotechnology 26), we observe surface leakage currents in etched m-plane Zn(Mg)O structures. We show that they depend on the applied etching process and surface treatment techniques as well as the barrier composition in the Zn(Mg)O heterostructures. In addition, a treatment in hydrogen peroxide (H2O2) yields a significant surface leakage current suppression up to several orders of magnitude. |
| Databáze: | OpenAIRE |
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