Laser ablation thresholds of silicon for different pulse durations: theory and experiment
| Autor: | M. Lenzner, Jörg Krüger, Jörn Bonse, Martin E. Garcia, Wolfgang Kautek, Harald Olaf Jeschke |
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| Rok vydání: | 2002 |
| Předmět: |
Laser ablation
Silicon Chemistry business.industry medicine.medical_treatment General Physics and Astronomy Pulse duration chemistry.chemical_element Surfaces and Interfaces General Chemistry Condensed Matter Physics Ablation Laser Surfaces Coatings and Films Pulse (physics) law.invention Optics law medicine Irradiation business Ultrashort pulse |
| Zdroj: | ResearcherID |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/s0169-4332(02)00458-0 |
| Popis: | The ultrafast laser ablation of silicon has been investigated experimentally and theoretically. The theoretical description is based on molecular dynamics (MD) simulations combined with a microscopic electronic model. We determine the thresholds of melting and ablation for two different pulse durations τ=20 and 500 fs. Experiments have been performed using 100 Ti:Sap-phire laser pulses per spot in air environment. The ablation thresholds were determined for pulses with a duration of 25 and 400 fs, respectively. Good agreement is obtained between theory and experiment. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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