Electrochemical nanoimprinting of silicon
| Autor: | Placid M. Ferreira, Bruno Azeredo, Aliaksandr Sharstniou, Stanislau Niauzorau |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Multidisciplinary
Silicon photonics Materials science Silicon silicon photonics business.industry Nanophotonics chemistry.chemical_element Nanotechnology metal-assisted chemical etching Porous silicon Nanomanufacturing Engineering chemistry Photovoltaics 3D silicon micromachining Physical Sciences nanoimprinting business Lithography microfabrication Microfabrication |
| Zdroj: | Proceedings of the National Academy of Sciences of the United States of America |
| ISSN: | 1091-6490 0027-8424 |
| Popis: | Significance The indirect nature of existing parallel micromachining strategies that combine sacrificial templates with top-down processes to etch 3D micro- and nanostructures inherently produces poor out-of-plane patterning fidelity. Here, the patterning fidelity of our process is measured for microscale curvilinear 3D objects to be less than 20 nm in rms averaged over features as wide as 10 µm. These results are attributed to increased pathways for diffusion, which increase the kinetics of the anodic reaction. Using this approach, arrays of nanotextured silicon lenses are deterministically imprinted to illustrate Mac-Imprint’s ability to directly pattern hierarchical micro- and nanostructures and enable fabrication of biomimetic optical designs on silicon. Scalable nanomanufacturing enables the commercialization of nanotechnology, particularly in applications such as nanophotonics, silicon photonics, photovoltaics, and biosensing. Nanoimprinting lithography (NIL) was the first scalable process to introduce 3D nanopatterning of polymeric films. Despite efforts to extend NIL’s library of patternable media, imprinting of inorganic semiconductors has been plagued by concomitant generation of crystallography defects during imprinting. Here, we use an electrochemical nanoimprinting process—called Mac-Imprint—for directly patterning electronic-grade silicon with 3D microscale features. It is shown that stamps made of mesoporous metal catalysts allow for imprinting electronic-grade silicon without the concomitant generation of porous silicon damage while introducing mesoscale roughness. Unlike most NIL processes, Mac-Imprint does not rely on plastic deformation, and thus, it allows for replicating hard and brittle materials, such as silicon, from a reusable polymeric mold, which can be manufactured by almost any existing microfabrication technique. |
| Databáze: | OpenAIRE |
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