New Insights on the Burstein-Moss Shift and Band Gap Narrowing in Indium-Doped Zinc Oxide Thin Films
| Autor: | Fong Kwong Yam, Sha Shiong Ng, N. M. Aznan, Swee-Yong Pung, K. G. Saw |
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| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: |
Multidisciplinary
Dopant business.industry Chemistry Band gap Doping lcsh:R Analytical chemistry lcsh:Medicine Spectrum Analysis Raman Indium symbols.namesake Semiconductor Lattice constant Electrical resistivity and conductivity symbols lcsh:Q Crystallite Particle Size Zinc Oxide business Raman spectroscopy Crystallization lcsh:Science Research Article |
| Zdroj: | PLoS ONE, Vol 10, Iss 10, p e0141180 (2015) PLoS ONE |
| ISSN: | 1932-6203 |
| Popis: | The Burstein-Moss shift and band gap narrowing of sputtered indium-doped zinc oxide (IZO) thin films are investigated as a function of carrier concentrations. The optical band gap shifts below the carrier concentration of 5.61 × 1019 cm-3 are well-described by the Burstein-Moss model. For carrier concentrations higher than 8.71 × 1019 cm-3 the shift decreases, indicating that band gap narrowing mechanisms are increasingly significant and are competing with the Burstein-Moss effect. The incorporation of In causes the resistivity to decrease three orders of magnitude. As the mean-free path of carriers is less than the crystallite size, the resistivity is probably affected by ionized impurities as well as defect scattering mechanisms, but not grain boundary scattering. The c lattice constant as well as film stress is observed to increase in stages with increasing carrier concentration. The asymmetric XPS Zn 2p3/2 peak in the film with the highest carrier concentration of 7.02 × 1020 cm-3 suggests the presence of stacking defects in the ZnO lattice. The Raman peak at 274 cm-1 is attributed to lattice defects introduced by In dopants. |
| Databáze: | OpenAIRE |
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