Mg-Doped Hexagonal InN/Al2O3 Films Grown by MBE

Autor:	V. Yu. Davydov, V. V. Ratnikov, V. A. Vekshin, V. V. Mamutin, Sergei Ivanov, Valentin V. Emtsev, Yu.A. Kudriavtsev, B. Ya. Ber
Rok vydání:	1999
Předmět:	Diffraction Free electron model Electron mobility Materials science Magnesium Doping chemistry.chemical_element Condensed Matter Physics Electronic Optical and Magnetic Materials Crystal Crystallography chemistry Order of magnitude Molecular beam epitaxy
Zdroj:	ResearcherID
ISSN:	1521-396X 0031-8965
Popis:	We report on the first attempts of Mg doping of hexagonal InN/Al2O3(0001) films grown by plasma-assisted molecular beam epitaxy. A dramatic improvement of crystalline quality of InN : Mg epilayers has been observed at the magnesium concentration in the 1019 to 3 ×1020 cm—3 range as indicated by triple-crystal X-ray diffraction θ-rocking curve peak width below 30 arcsec. An increase of Mg doping higher than 1021 cm—3 deteriorates dramatically the InN crystal quality and surface morphology. A thermodynamic model of the surfactant Mg effect is proposed. The increase in Mg concentration causes the reduction by an order of magnitude (down to n = 1019 cm—3) of free electron concentration in InN : Mg layers compared to undoped ones, accompanied by a significant reduction of electron mobility. This behavior can be explained by a complex effect of the crystal quality improvement and the carrier compensation by incorporated Mg acceptors.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e213197c19ea2fa2bbc962d254046a1 https://doi.org/10.1002/(sici)1521-396x(199911)176:1<373::aid-pssa373>3.0.co Zobrazit plný text záznamu Plný text