Ultrafast, Polarized, Single-Photon Emission from m-Plane InGaN Quantum Dots on GaN Nanowires
| Autor: | Puchtler, Tim J, Wang, Tong, Ren, Christopher X, Tang, Fengzai, Oliver, Rachel A, Taylor, Robert A, Zhu, Tongtong |
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| Přispěvatelé: | Oliver, Rachel [0000-0003-0029-3993], Zhu, Tongtong [0000-0002-9481-8203], Apollo - University of Cambridge Repository |
| Rok vydání: | 2017 |
| Předmět: |
polarized
Condensed Matter - Materials Science Quantum Physics Condensed Matter - Mesoscale and Nanoscale Physics InGaN Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences Physics::Optics quantum dot Condensed Matter::Mesoscopic Systems and Quantum Hall Effect m-Plane Condensed Matter::Materials Science Mesoscale and Nanoscale Physics (cond-mat.mes-hall) single photon Quantum Physics (quant-ph) |
| DOI: | 10.17863/cam.11304 |
| Popis: | We demonstrate single-photon emission from self-assembled m-plane InGaN quantum dots (QDs) embedded on the side-walls of GaN nanowires. A combination of electron microscopy, cathodoluminescence, time-resolved microphotoluminescence (μPL), and photon autocorrelation experiments give a thorough evaluation of the QD structural and optical properties. The QD exhibits antibunched emission up to 100 K, with a measured autocorrelation function of g(2)(0) = 0.28(0.03) at 5 K. Studies on a statistically significant number of QDs show that these m-plane QDs exhibit very fast radiative lifetimes (260 ± 55 ps) suggesting smaller internal fields than any of the previously reported c-plane and a-plane QDs. Moreover, the observed single photons are almost completely linearly polarized aligned perpendicular to the crystallographic c-axis with a degree of linear polarization of 0.84 ± 0.12. Such InGaN QDs incorporated in a nanowire system meet many of the requirements for implementation into quantum information systems and could potentially open the door to wholly new device concepts. |
| Databáze: | OpenAIRE |
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