Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
| Autor: | Zhonghua Zhang, Bo Liu, Dongning Yao, Songlin Feng, Sannian Song, L. Li, Yan Cheng, Lina Gao, Zhitang Song, Liangcai Wu, Lanlan Shen |
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| Jazyk: | angličtina |
| Předmět: |
Materials science
Nano Express business.industry Chalcogenide Electric properties Atomic layer deposition Nanotechnology Chemical vapor deposition GeSbTe Condensed Matter Physics Phase-change memory Non-volatile memory chemistry.chemical_compound chemistry Materials Science(all) Optoelectronics General Materials Science Thin film business Layer (electronics) Microstructure |
| Zdroj: | Nanoscale Research Letters |
| ISSN: | 1556-276X |
| DOI: | 10.1186/s11671-015-0815-5 |
| Popis: | Phase-change access memory (PCM) appears to be the strongest candidate for next-generation high-density nonvolatile memory. The fabrication of ultrahigh-density PCM depends heavily on the thin-film growth technique for the phase-changing chalcogenide material. In this study, Ge2Sb2Te5 (GST) and GeSb8Te thin films were deposited by plasma-enhanced atomic layer deposition (ALD) method using Ge [(CH3)2 N]4, Sb [(CH3)2 N]3, Te(C4H9)2 as precursors and plasma-activated H2 gas as reducing agent of the metallorganic precursors. Compared with GST-based device, GeSb8Te-based device exhibits a faster switching speed and reduced reset voltage, which is attributed to the growth-dominated crystallization mechanism of the Sb-rich GeSb8Te films. These results show that ALD is an attractive method for preparation of phase-change materials. |
| Databáze: | OpenAIRE |
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