The effects of lithographic residues and humidity on graphene field effect devices
| Autor: | H. Çetin, Behiye Boyarbay Kantar, Muhittin Öztürk |
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| Přispěvatelé: | [Kantar, Behiye Boyarbay] Erciyes Univ, Fac Sci, Dept Phys, TR-38039 Kayseri, Turkey -- [Ozturk, Muhittin] Nigde Univ, Grad Sch Nat & Appl Sci, Dept Phys, TR-51240 Nigde, Turkey -- [Cetin, Hidayet] Bozok Univ, Art & Sci Fac, Dept Phys, TR-66900 Yozgat, Turkey, 0-Belirlenecek |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
Imagination
Chemical substance Materials science media_common.quotation_subject Field effect Nanotechnology 02 engineering and technology 010402 general chemistry 01 natural sciences law.invention symbols.namesake law General Materials Science media_common business.industry Graphene SERS GFET humidity Humidity 021001 nanoscience & nanotechnology 0104 chemical sciences Mechanics of Materials symbols Optoelectronics 0210 nano-technology business Raman spectroscopy Science technology and society Graphene nanoribbons |
| Popis: | WOS: 000397003200029 Recently, unknown-manner changes in charge neutrality point (CNP) positioning were ascribed to humidity at graphene field effect transistors (GFETs). While the exact means of humidity interacting with hydrophobic graphene remains unknown, this work examines pristine and lithographic-process-applied graphene surfaces with surface enhanced Raman spectra (SERS). SERS analysis shows that the lithographic-process-applied graphene does not have the same properties as those of pristine graphene. Furthermore, this study has experimentally investigated the effect of humidity on the transfer characteristics of GFET and proposed a model to explain the formation of asymmetric IDS-Vbg branches in accordance with the SERS results and humidity responses. Scientific and Technical Research Council of Turkey (TUBITAK) [108T930] We will never forget Asli SIMSEK, who was a master student at our group, and we would like to thank her for valuable contributions. We would like to thank ARGESAN for contribution in fabricating a mask aligner. This work was supported by the Scientific and Technical Research Council of Turkey (TUBITAK) under Grant no. 108T930. |
| Databáze: | OpenAIRE |
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