Internal photoemission spectroscopy for a PtSi/p-type Si Schottky-barrier diode

Autor:	Y Asano, K Konuma, Kenji Hirose
Rok vydání:	1995
Předmět:	Materials science business.industry Photoemission spectroscopy Inverse photoemission spectroscopy Schottky diode Optoelectronics Angle-resolved photoemission spectroscopy business Excitation Voltage Diode
Zdroj:	Physical Review B. 51:13187-13191
ISSN:	1095-3795 0163-1829
Popis:	Internal photoemission spectroscopy characteristics for a PtSi/p-type Si Schottky-barrier diode have been studied. The authors present a one-dimensional calculation of the internal photoemission spectroscopy for Schottky-barrier diodes, taking into account the effective barrier height and the position from the PtSi/p-type Si interface. The internal photoemission spectroscopy characteristics so calculated are then compared with the measured characteristics obtained for PtSi/p-type Si Schottky-barrier diodes under different PtSi thicknesses and applied voltage conditions. The hot hole escape depths in both PtSi and Si are then determined and the excitation energy effects are presented.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0db45fa46c4b3f93575b502f2fa2c565 https://doi.org/10.1103/physrevb.51.13187 Zobrazit plný text záznamu