Observation of single phonon-mediated quantum transport in a silicon single-electron CMOS single-atom transistor by RMS noise analysis

Autor: Enrico Prati, M. L. V. Tagliaferri, Sebastiano Strangio, Paolo Organtini, Roberto Bez, Giorgio Ferrari, Dario Tamascelli, Stefano Bigoni
Přispěvatelé: CNR Istituto di Fotonica e Nanotecnologie [Milano] (IFN), National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR), Laboratoire de Transport Electronique Quantique et Supraconductivité (LaTEQS), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Università degli Studi di Milano-Bicocca = University of Milano-Bicocca (UNIMIB), LFoundry, Politecnico di Milano [Milan] (POLIMI)
Jazyk: angličtina
Rok vydání: 2020
Předmět:
Zdroj: Applied Physics Express
Applied Physics Express, 2020, 13 (12), pp.125001. ⟨10.35848/1882-0786/abc7cf⟩
ISSN: 1882-0786
Popis: We explore phonon-mediated quantum transport through electronic noise characterization of a commercial CMOS transistor. The device behaves as a single electron transistor thanks to a single impurity atom in the channel. A low noise cryogenic CMOS transimpedance amplifier is exploited to perform low-frequency noise characterization down to the single electron, single donor and single phonon regime simultaneously, not otherwise visible through standard stability diagrams. Single electron tunneling as well as phonon-mediated features emerges in rms-noise measurements. Phonons are emitted at high frequency by generation-recombination phenomena by the impurity atom. The phonon decay is correlated to a Lorentzian $1/f^2$ noise at low frequency.
Comment: 5 pages, 3 figures, submitted to APL
Databáze: OpenAIRE