A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs
| Autor: | Carlo De Santi, Luca Sayadi, Enrico Zanoni, Matteo Meneghini, Andrea Minetto, Gaudenzio Meneghesso, Nicola Modolo, Gerhard Prechtl, Sebastien Sicre |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Logarithm Transistor Kinetics Wide-bandgap semiconductor analytical model semi-ON-stress Trapping Rate equation 01 natural sciences p-GaN HEMTs Electronic Optical and Magnetic Materials law.invention Stress (mechanics) hot electrons law 0103 physical sciences Transient (oscillation) Electrical and Electronic Engineering Atomic physics |
| Zdroj: | IEEE Electron Device Letters. 42:673-676 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2021.3067796 |
| Popis: | Hot electron trapping can significantly modify the performance of GaN-based HEMTs during hard switching operation. In this letter, we present a physics-based model based on rate equations to model the trapping kinetics of hot-electrons in GaN transistors submitted to semi- ON-state stress. The model is validated through comparison with the experimental data, obtained by means of a pulsed-drain current transient setup developed ad-hoc. Hot-electron trapping is found to have logarithmic time dependence; the first 10 $\mu \text{s}$ of operation are critical in determining the current collapse during stress. |
| Databáze: | OpenAIRE |
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