Charge Configuration Memory (CCM) Device – A Novel Approach to Memory
Autor: | Igor Vaskivskyi, Yelyzaveta Chernolevska, Damjan Svetin, Anže Mraz, Dragan Mihailovic, Rok Venturini |
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Jazyk: | angličtina |
Předmět: |
charge density wave (cdw)
TK7800-8360 Computer science 1t-tas2 charge configuration memory (ccm) 01 natural sciences 7. Clean energy Switching time 0103 physical sciences Electrical and Electronic Engineering Scaling Quantum computer Leakage (electronics) 010302 applied physics Superconductivity ultrafast devices business.industry Electrical engineering Charge (physics) Electronic Optical and Magnetic Materials visual_art Electronic component visual_art.visual_art_medium Electronics business Energy (signal processing) |
Zdroj: | Informacije MIDEM-Journal of Microelectronics, Electronic Components and Materials Informacije MIDEM, Vol 51, Iss 3, Pp 157-167 (2021) |
ISSN: | 2232-6979 0352-9045 |
DOI: | 10.33180/infmidem2021.302 |
Popis: | Computer technologies have advanced unimaginably over the last 70 years, mainly due to scaling of electrical components down to the nanometre regime and their consequential increase in density, speed and performance. Decrease in dimensions also brings about many unwanted side effects, such as increased leakage, heat dissipation and increased cost of production [1], [2]. However, it seems that one of the biggest factors limiting further progress in high-performance computing is the increasing difference in performance between processors and memory units, a so called processor-memory gap [3]. To increase the efficiency of memory devices, emerging alternative non-volatile memory (NVM) technologies could be introduced, promising high operational speed, low power consumption and high density [4]. This review focuses on a conceptually unique non-volatile Charge Configuration Memory (CCM) device, which is based on resistive switching between different electronic states in a 1T-TaS 2 crystal [5]. CCM demonstrates ultrafast switching speed |
Databáze: | OpenAIRE |
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