Recent Advances in Metal Halide-Based Perovskite Light-Emitting Diodes

Autor: Dinesh Kabra, Dhritiman Gupta, Naresh K. Kumawat
Jazyk: angličtina
Rok vydání: 2017
Předmět:
Zdroj: IndraStra Global.
ISSN: 2381-3652
DOI: 10.1002/ente.201700356
Popis: Metal-halide perovskite materials are crystalline semiconductors that can be processed at room temperature using solution-processible deposition techniques. In only a few years, perovskite-based solar cell efficiencies have seen a huge increase from 3% to 22.1%. These direct-bandgap materials are potential candidates for other optoelectronic de-vice applications such as photodetectors, light-emitting transistors, and light-emitting diodes. In this Review, we present the current state-of-the-art in the research and development of perovskite light-emitting diodes (PeLEDs) based on metal halide perovskite semiconductors with an emphasis on size of crystallites and its effects on optical properties, device architectures, and Pe-LED performance parameters. A uniform pinhole-free morphology with small grain size is essential for high-performance PeLEDs. For this purpose, a p-i-n type device architecture with a p-type poly(3,4-ethylenedioxythiophone}:polystyrene sulfonate (PEDOT:PSS) layer was found to be more-suitable than the n-i-p type. In PeLEDs based on hulk-phase perovskites, the average size of the crystallites is in the range 100-500 nm. The efficiency can be improved further by using perovskite nanoparticles with size
Databáze: OpenAIRE