Top-split-gate ambipolar organic thin-film transistors
| Autor: | Jae-Joon Kim, Seon Baek Lee, Edsger C. P. Smits, Dongkyu Lee, Kilwon Cho, Hocheon Yoo, Gerwin H. Gelinck |
|---|---|
| Přispěvatelé: | Molecular Materials and Nanosystems |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Materials science
02 engineering and technology Dielectric Hardware_PERFORMANCEANDRELIABILITY 010402 general chemistry 01 natural sciences Bias stress Ambipolar organic transistors law.invention Complementary electronics law Hardware_INTEGRATEDCIRCUITS Ambipolar semiconductors business.industry Ambipolar diffusion Transistor 021001 nanoscience & nanotechnology 0104 chemical sciences Electronic Optical and Magnetic Materials Noise margin Thin-film transistor Power consumption Inverter Optoelectronics 0210 nano-technology business Multigate devices Hardware_LOGICDESIGN |
| Zdroj: | Advanced Electronic Materials, 4(5):1700536. Wiley-VCH Verlag |
| ISSN: | 2199-160X |
| Popis: | Split-gate ambipolar organic transistor technology is gaining interests as a practical solution for the implementation of complementary transistors. It is known that conventional ambipolar transistors suffer from poor DC gain, noise margin, and high power consumption, as they do not have a well-defined off-state region. A split-gate device structure enables ambipolar transistors operating in a controlled unipolar mode (both p-type and n-type), resulting in superior inverter characteristics. A key challenge in previously reported split-gate ambipolar organic thin-film transistors is the strong current-voltage instabilities due to charge trapping at the dielectric interface. Here, the first split-gate ambipolar organic transistors with top-gate/bottom-contact structure are demonstrated. Compared to the previous split-gate devices, the top-split-gate ambipolar organic transistor exhibits superior electrical properties. The proposed device shows hysteresis-free I-V characteristics as well as higher bias stress stability. Furthermore, the complementary inverter circuit using the proposed transistors is also demonstrated, which results in a higher output swing and DC gain compared to the baseline ambipolar inverter. |
| Databáze: | OpenAIRE |
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