Features of Photothermal Ionization in Photoconducting Spectra of MidInfrared Silicon Detectors Doped by Deep Selenium Double Donors
| Autor: | Andreas Pohl, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Heinz-Wilhelm Hübers, Sergey Pavlov, Yuri A. Astrov |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Silicon Materials science Dopant Physics::Instrumentation and Detectors business.industry Infrared Photoconductivity Doping chemistry.chemical_element Infrared spectroscopy 02 engineering and technology Photothermal therapy 021001 nanoscience & nanotechnology 01 natural sciences Spectral line chemistry 0103 physical sciences Optoelectronics 0210 nano-technology business Infrare Detector |
| Popis: | Diatomic centers of double donor doped silicon have lower chemical shifts as compared to the corresponding atomic impurity and by this essentially extend spectral sensitivity of silicon extrinsic infrared detectors towards longer wavelengths. Additional expansion of the detector spectral band, up to the effective-mass approximated theoretical value of about 2.7 THz, can be obtained by photothermal infrared absorption originated from intracenter transitions of a dopant. Due to large energy gaps between lowest excited states of double donors in silicon related photothermal transitions have not been considered yet as applicable for photoconductive light detection. We have investigated the operational conditions suitable for expanding the low temperature detection wavelength cut-off of selenium doped silicon infrared detectors towards 6.2 μm. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|