A Technique for the Non-Destructive EUV Mask Sidewall Angle Measurement Using Scanning Electron Microscope
| Autor: | Sangheon Lee, Sangpyo Kim, Donggyu Yim, Hye-Keun Oh, Junhwan Lee, Sanghyun Ban, Ohyun Kim, Byung-Ho Nam |
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| Rok vydání: | 2013 |
| Předmět: |
Conventional transmission electron microscope
Materials science business.industry Scanning electron microscope Extreme ultraviolet lithography Biomedical Engineering Bioengineering Mask inspection General Chemistry Condensed Matter Physics Optics Optical proximity correction General Materials Science Electron beam-induced deposition business Critical dimension Environmental scanning electron microscope |
| Zdroj: | Journal of Nanoscience and Nanotechnology. 13:8032-8035 |
| ISSN: | 1533-4899 1533-4880 |
| Popis: | EUV mask absorber sidewall angle should be measured for mask Optical Proximity Correction and shadow effect estimation. Hence, verifying the three-dimensional profile of mask topography has become a challenge in EUV mask inspection. This paper evaluates EUV mask sidewall angle measurement by Field-Emission Critical Dimension (CD)-Scanning Electron Microscope (SEM) using JEOL JSM-7401F. SEM only produces two-dimensional gray images. Forming three-dimensional profiles from these images is a critical requirement for the sidewall angle measurement. To obtain three-dimensional information, absorber edge width has to be measured first to measure sidewall angle. We can calculate absorber sidewall angle with the exactly measured edge width and absorber height. Edge width narrows with steeper sidewall angle. We used the image processing function of Matlab to obtain absorber edge width accurately. In the end, every measured sidewall angle was compared to Transmission Electron Microscope (TEM) images to evaluate the validity of SEM results. Measured sidewall angles by SEM and TEM cross-section images have average tolerances of 0.62 degrees. |
| Databáze: | OpenAIRE |
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