Direct Laser Doping Of Various Materials

Autor:	Aldo Ferrari, G. N. Mikhailova, A. S. Seferov, Ion N. Mihailescu, Maurizio Martino, Gilberto Leggieri, Valentin Craciun, Mario Bertolotti, Armando Luches
Přispěvatelé:	Nikolai I. Koroteev, Vladislav Y. Panchenko, V., Craciun, I. N., Mihailescu, G. N., Mihailova, A. S., Seferov, M., Bertolotti, A., Ferrari, A., Luche, G., Leggieri, Martino, Maurizio, N.I.KOROTEEV, V.Y. PANCHENKO, Craciun, V, MIHAILESCU I., N, MIKHAILOVA G., N, SEFEROV A., S, Bertolotti, M, Ferrari, A, Luches, A, Leggieri, Gilberto, Martino, M.
Jazyk:	angličtina
Rok vydání:	1991
Předmět:	Interconnection Fabrication Materials science business.industry law Optical engineering Doping Microelectronics Optoelectronics business Laser Ohmic contact law.invention
Popis:	Laser doping method has an attractive set of important advantages, very useful for microelectronics applications. Using this method we have obtained shallow and heavily doped p+ - n junctions, ohmic contacts, and interconnection lines. We have extended our laser method for Ti in-diffusion into LiNbO3, the common technique for optical waveguides fabrication.© (1992) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0cd040718f844bbf41b760f603a9d2b4 https://hdl.handle.net/11587/369501 Zobrazit plný text záznamu