Detailed investigation of defect states in Erbium doped In2O3 thin films
| Autor: | Aniruddha Mondal, Shyam Murli Manohar Dhar Dwivedi, Anupam Ghosh, Shubhro Chakrabartty, Mohamed Henini |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
B. Chemical synthesis
Materials science Analytical chemistry chemistry.chemical_element 02 engineering and technology 01 natural sciences A. Electronic materials Erbium 0103 physical sciences General Materials Science Thin film D. Electrical properties 010302 applied physics business.industry Mechanical Engineering Doping D. Defects Schottky diode Atmospheric temperature range 021001 nanoscience & nanotechnology Condensed Matter Physics Blueshift A. Oxides Secondary ion mass spectrometry chemistry Mechanics of Materials Optoelectronics 0210 nano-technology business Indium |
| Zdroj: | Materials Research Bulletin. 99:211-218 |
| ISSN: | 0025-5408 |
| Popis: | Erbium doped Indium Oxide (In2O3:Er) thin films (TFs) were synthesised by spin-on technique. Secondary Ion Mass Spectrometry confirmed that Er is incorporated into the In2O3 lattice and formed an In-O-Er layer. The current–voltage loop produced a lower loop current window of ∼3.6 × 10−4 A for In2O3:Er TF based devices. The Au/In2O3:Er/Si Schottky devices have lower ideality factor (∼6) and higher barrier height (∼0.63 eV) at 300 K than Au/In2O3/Si control samples. A blue shift in the main band-gap (∼50 nm) was calculated for In2O3:Er TFs from 10 K photoresponse. The Au/In2O3:Er/Si samples show higher photosensitivity in the temperature range 10 K–300 K and maximum (∼15 times) in the UV region at 10 K as compared to the Au/In2O3/Si devices. In addition, the Au/In2O3:Er/Si devices have better UV to visible cut-off ratio (∼3 times). Excellent temporal responses were recorded for Au/In2O3:Er/Si in the UV region as compared to Au/In2O3/Si. |
| Databáze: | OpenAIRE |
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