Single Atomic Layer Ferroelectric on Silicon
| Autor: | Divine Kumah, James W. Reiner, Lior Kornblum, Stephanie Fernandez-Pena, Chong H. Ahn, Alexie M. Kolpak, Yichen Jia, Zoran Krivokapic, Fred Walker, Sohrab Ismail-Beigi, Mehmet Dogan |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Silicon business.industry Mechanical Engineering chemistry.chemical_element Bioengineering 02 engineering and technology General Chemistry Electron 021001 nanoscience & nanotechnology Condensed Matter Physics Polarization (waves) 01 natural sciences Ferroelectricity Hysteresis Semiconductor chemistry CMOS 0103 physical sciences Monolayer Optoelectronics General Materials Science 010306 general physics 0210 nano-technology business |
| Zdroj: | Nano Letters. 18:241-246 |
| ISSN: | 1530-6992 1530-6984 |
| Popis: | A single atomic layer of ZrO2 exhibits ferroelectric switching behavior when grown with an atomically abrupt interface on silicon. Hysteresis in capacitance–voltage measurements of a ZrO2 gate stack demonstrate that a reversible polarization of the ZrO2 interface structure couples to the carriers in the silicon. First-principles computations confirm the existence of multiple stable polarization states and the energy shift in the semiconductor electron states that result from switching between these states. This monolayer ferroelectric represents a new class of materials for achieving devices that transcend conventional complementary metal oxide semiconductor (CMOS) technology. Significantly, a single atomic layer ferroelectric allows for more aggressively scaled devices than bulk ferroelectrics, which currently need to be thicker than 5–10 nm to exhibit significant hysteretic behavior (Park, et al. Adv. Mater. 2015, 27, 1811). |
| Databáze: | OpenAIRE |
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