Filling porous silicon pores with poly(p phenylene vinylene)

Autor: M. de Kok, J.P. Bardeau, Dirk Vanderzande, M Lakehal, P Le Rendu, Pierre-Yves Joubert, Thien-Phap Nguyen, A. Bulou
Přispěvatelé: Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut for Material Research (IMO), Limburgs Universitair Centrum, Laboratoire de physique de l'état condensé (LPEC), Le Mans Université (UM)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Optronique, Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)
Jazyk: angličtina
Rok vydání: 2003
Předmět:
Zdroj: Physica Status Solidi A-Applications and Materials Science " Proceedings of the 3rd International Conference Porous Semiconductors-Science and Technology "
Porous Semiconductors-Science and Technology 3th international conference (PSST 2002), 11-15 march 2002
Porous Semiconductors-Science and Technology 3th international conference (PSST 2002), 11-15 march 2002, May 2003, Puerto de la Cruz, Tenerife Island, Spain. pp.232-235, ⟨10.1002/pssa.200306506⟩
DOI: 10.1002/pssa.200306506⟩
Popis: poster session 1 " Formation and characterisation " [P1-43]; International audience; We have investigated hybrid organic-inorganic systems composed of silicon-porous silicon and poly(phenylene vinylene) (PPV) in order to fabricate new light emitting devices, having properties of both materials. The key concern in these systems is the control of the penetration of the polymer into the pores of the semiconductor to obtain the best contact between the materials. By optimizing the deposition parameters, we have successfully filled the porous silicon wafers with PPV as proved by microscopy and Raman analysis of the sample cross section. We have also shown that the contact between the silicon pores and the polymer did not change the structure of both materials.
Databáze: OpenAIRE