4H-SiC wafers studied by X-ray absorption and Raman scattering
| Autor: | Hua Yang Sun, Zhe Chuan Feng, Ling Yun Jang, Chee-Wee Liu, Qiang Xu, Zhengyun Wu, E. Rusli, Zhi Ren Qiu, Cheng Chen, Chin-Che Tin, Suwan P. Mendis |
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| Přispěvatelé: | School of Electrical and Electronic Engineering, Silicon Carbide and Related Materials (2011) |
| Jazyk: | angličtina |
| Rok vydání: | 2012 |
| Předmět: |
Materials science
business.industry Mechanical Engineering X-ray Engineering::Electrical and electronic engineering::Electric apparatus and materials [DRNTU] Synchrotron radiation Condensed Matter Physics symbols.namesake chemistry.chemical_compound chemistry Mechanics of Materials symbols Silicon carbide Optoelectronics General Materials Science Wafer Absorption (electromagnetic radiation) business Raman scattering |
| Popis: | Synchrotron radiation X-ray absorption and UV 325 nm excitation Raman scattering- photoluminescence (PL) have been employed to investigate a series of 4H-SiC wafers, including bulk, epitaxial single or multiple layer structures by chemical vapor deposition. Significant results on the atomic bonding and PL-Raman properties are obtained from these comparative studies. |
| Databáze: | OpenAIRE |
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