Silicon Heterojunction Cells with Improved Spectral Response Using n-type mu c-Si from a Novel PECVD Approach
| Autor: | Hariharsudan Sivaramakrishnan Radhakrishnan, Gius Uddin, Maarten Debucquoy, Yury Smirnov, Yaser Abdulraheem, Miha Filipič, Shruti Jambaldinni, Jef Poortmans, Twan Bearda, Ivan Gordon, Arsalan Razzaq, Ivan Vasil'evskii, Jinyoun Cho, Menglei Xu, Kris Van Nieuwenhuysen |
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| Přispěvatelé: | Smirnov, Yury, Bearda, Twan, Radhakrishnan, Hariharsudan Sivaramakrishnan, Filipic, Miha, Cho, Jinyoun, Xu, Menglei, Jambaldinni, Shruti, Razzaq, Arsalan, Uddin, M. D. Gius, Van Nieuwenhuysen, Kris, GORDON, Ivan, Debucquoy, Maarten, Abdulraheem, Yaser, Vasil'evskii, Ivan, POORTMANS, Jef |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Amorphous silicon Materials science business.industry Doping 02 engineering and technology Chemical vapor deposition Electron 021001 nanoscience & nanotechnology 01 natural sciences chemistry.chemical_compound chemistry Sputtering Plasma-enhanced chemical vapor deposition 0103 physical sciences Optoelectronics 0210 nano-technology Absorption (electromagnetic radiation) business Layer (electronics) |
| Popis: | One of the promising ways to increase the efficiency of silicon heterojunction (SHJ) cells is to replace the doped hydrogenated amorphous silicon (a-Si:H) contact layer by doped hydrogenated microcrystalline silicon (mu c-Si:H) which has better suited opto-electrical properties. In this work, we report on the development of a plasma-enhanced chemical vapor deposition process for mu c-Si:H. We demonstrate an n-type mu c-Si:H layer with high crystalline fraction and low parasitic absorption. The developed layer is implemented as the front electron contact of a SHJ cell. A significant improvement in J(sc) of 0.9 mA/cm(2) is achieved on device level while maintaining high V-OC values (> 725 mV), leading to an efficiency of 20.6% for the best cell. Cell efficiency is limited by a decreased FF which is attributed to the increased sensitivity of mu c-Si:H layers to ITO sputtering damage. The authors gratefully acknowledge the financial support of imec's industrial affiliation program for Si-PV. Part of this project has received funding from the European Union's Horizon 2020 research and innovation programme under the Marie Sklodowska-Curie grant agreement No 657270. |
| Databáze: | OpenAIRE |
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