Surface strain in GexSi1-x films measured by LEED
| Autor: | R.A. Malic, E.G. McRae |
|---|---|
| Rok vydání: | 1985 |
| Předmět: |
Materials science
Low-energy electron diffraction Chemistry business.industry Annealing (metallurgy) Surface strain Analytical chemistry Surfaces and Interfaces Condensed Matter Physics Digital records Surfaces Coatings and Films Crystallography Semiconductor Sputtering Materials Chemistry Thin film business |
| Zdroj: | Surface Science Letters. 163:L702-L707 |
| ISSN: | 0167-2584 |
| DOI: | 10.1016/0167-2584(85)90872-2 |
| Popis: | A method of measuring the surface strain of thin films using low energy electron diffraction (LEED) is described with examples. A novel LEED system employing position-sensitive detection to make digital records of LEED patterns was used. A 500 A thick Ge film grown by MBE on a Si(111)-7×7 substrate showed a c(2×8) LEED pattern and was found to be unstrained within error (±0.2%). A Ge x Si 1- x ( x =0.53) film prepared by sputtering and annealing the Ge film showed a 5×5 pattern and was found to be pseudomorphic (±0.2%). The significance of the measurement is discussed with reference to theoretical ideas linking lateral compressive stress and reconstruction of semiconductor (111) surfaces. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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