Direct evidence of the self-compression of injected electron-hole plasma in silicon
| Autor: | Evgenii Kuzminov, Pavel Altukhov |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Condensed Matter - Materials Science
Materials science Silicon Direct evidence business.industry Physics::Instrumentation and Detectors Astrophysics::High Energy Astrophysical Phenomena chemistry.chemical_element Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences Electron hole Plasma Electroluminescence Condensed Matter Physics Compression (physics) Electronic Optical and Magnetic Materials law.invention chemistry law Optoelectronics business Diode Light-emitting diode |
| DOI: | 10.48550/arxiv.0801.2528 |
| Popis: | A surface distribution of the electroluminescence intensity of silicon p-n light emitting diodes is obtained under space scanning experiments at room temperature. An emitting surface of the diodes, represented by a few small bright emitting dots and a weakly emitting area outside the dots, serves as a direct evidence of the self-compression of injected electron-hole plasma in silicon. The plasma self-compression explains concentration of injected carriers into one or a few strongly emitting plasma drops. Comment: 3 pages, 2 figures, published in Physica Status Solidi (b) |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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