Properties of amorphous CoZr(RE) (RE=Gd, Sm, Dy) films with various uniaxial anisotropies, prepared by a new process
Autor: | D.H. Shin, H. Niedoba, G. Suran, D Chumakov, Rudolf Schäfer, Yves Henry, F. Machizaud, Valerie Brien |
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Rok vydání: | 2002 |
Předmět: |
010302 applied physics
Condensed Matter - Materials Science Materials science Condensed matter physics Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Amorphous solid Magnetic field Condensed Matter::Materials Science Magnetization Sputtering 0103 physical sciences Perpendicular Thin film 0210 nano-technology Anisotropy Spin (physics) |
Zdroj: | Journal of Magnetism and Magnetic Materials. 249:422-427 |
ISSN: | 0304-8853 |
DOI: | 10.1016/s0304-8853(02)00462-6 |
Popis: | If a DC magnetic field is applied parallel to the plane of amorphous CoZr(RE) thin films during sputter depositing, a uniaxial anisotropy is formed the direction of which depends upon the choice of RE substituted and its concentration. When RE = Gd a perpendicular anisotropy K, forms over a large concentration range, a spin reorientation process being at the origin of the process. A well-defined K, is developed also in CoFeZrGd and CoZrGdSm films. CoZrGdDy films exhibit simultaneously a perpendicular and an in-plane uniaxial anisotropy. The related magnetization process and domain structures are quite peculiar. |
Databáze: | OpenAIRE |
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