The Influence of Vanadium Doping on the Physical and Electrical Properties of Non-Volatile Random Access Memory Using the BTV, BLTV, and BNTV Oxide Thin Films
| Autor: | Sean Wu, Jen-Hwan Tsai, Chin-Hsiung Liao, Kai-Huang Chen, Chien-Min Cheng |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Magnetoresistive random-access memory
Hardware_MEMORYSTRUCTURES Materials science business.industry Inorganic chemistry Integrated circuit Flash memory law.invention Resistive random-access memory Semiconductor law Ferroelectric RAM Optoelectronics Non-volatile random-access memory Thin film business |
| Zdroj: | Advances in Ferroelectrics |
| DOI: | 10.5772/52203 |
| Popis: | Recently, the various functional thin films were widely focused on the applications in nonvolatile random access memory (NvRAM), such as smart cards and portable electrical devi‐ ces utilizing excellent memory characteristics, high storage capacity, long retention cycles, low electric consumption, non-volatility, and high speed readout. Additionally, the various non-volatile random access memory devices such as, ferroelectric random access memory (FeRAM), magnetron memory (MRAM), resistance random access memory (RRAM), and flash memory were widely discussed and investigated [1-9]. However, the high volatile pol‐ lution elements and high fabrication cost of the complex composition material were serious difficult problems for applications in integrated circuit semiconductor processing. For this reason, the simple binary metal oxide materials such as ZnO, Al2O3, TiO2, and Ta2O5 were widely considered and investigated for the various functional electronic product applica‐ tions in resistance random access memory devices [10-12]. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|