Type I CdSe and CdMgSe Quantum Wells
Autor: | Piotr Kossacki, Andrzej Golnik, Wojciech Pacuski, R. Rudniewski, Michał Nawrocki, E. Janik, J.-G. Rousset |
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Rok vydání: | 2014 |
Předmět: | |
Zdroj: | ResearcherID |
ISSN: | 1898-794X 0587-4246 |
DOI: | 10.12693/aphyspola.126.1167 |
Popis: | In this work we present the band gap engineering, epitaxial growth and optical characterization of CdSe/Cd0.9Mg0.1Se and Cd0.9Mg0.1Se/Cd0.85Mg0.15Se quantum wells with a thickness ranging from 1 to 15 nm. These structures exhibit strong near-band-gap photoluminescence from helium up to room temperature. The emission energy is tuned in the range from 1.74 to 2.1 eV at 7 K, depending on the thickness and well composition. The most intense photoluminescence (both at 7 and 300 K) was observed for 10 nm thick CdSe/Cd0.9Mg0.1Se wells. Such a structure gives also a sharp emission line (FWHM = 20 meV) at low temperature. The presented quantum wells are well suited for being embedded in lattice matched ZnTe based microcavities. |
Databáze: | OpenAIRE |
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