Polycrystalline SiC as Source Material for the Growth of Fluorescent SiC Layers

Autor:	Thomas Hupfer, Margareta K. Linnarsson, Saskia Schimmel, Mikael Syväjärvi, Haiyan Ou, Yiyu Ou, Peter J. Wellmann, Valdas Jokubavicius, Michl Kaiser
Rok vydání:	2013
Předmět:	Materials science Mechanical Engineering Kinetics Doping Nanotechnology Condensed Matter Physics Epitaxy Fluorescence Mechanics of Materials Source material General Materials Science Sublimation (phase transition) Growth rate Crystallite Composite material
Zdroj:	Technical University of Denmark Orbit Kaiser, M, Hupfer, T, Jokubavicus, V, Schimmel, S, Syväjärvi, M, Ou, Y, Ou, H, Linnarsson, M K & Wellmann, P 2012, ' Polycrystalline SiC as source material for the growth of fluorescent SiC layers ', European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), Saint-Petersburg, Russian Federation, 02/09/2012-06/09/2012 .
ISSN:	1662-9752
DOI:	10.4028/www.scientific.net/msf.740-742.39
Popis:	Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport method. The grain influence on the growth rate of fluorescent SiC layers grown by a sublimation epitaxial process is discussed in respect of surface kinetics.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0b5e9efbe8118686ff711be96fdc08b9 https://doi.org/10.4028/www.scientific.net/msf.740-742.39 Zobrazit plný text záznamu