Electronic transport features of MoTe2caused by quenching

Autor:	V. V. Chistyakov, J. C.A. Huang, S. V. Naumov, V. V. Marchenkov, S. M. Podgornykh, P. S. Korenistov, A. N. Domozhirova
Jazyk:	angličtina
Rok vydání:	2020
Předmět:	History Quenching (fluorescence) Materials science TELLURIUM COMPOUNDS OPTOELECTRONIC DEVICES ELECTRONIC TRANSPORT Photochemistry NANOSTRUCTURES Computer Science Applications Education FIELD DEPENDENCE MOLYBDENUM COMPOUNDS PHOTONICS QUENCHING
Zdroj:	J. Phys. Conf. Ser. Journal of Physics: Conference Series
DOI:	10.1088/1742-6596/1695/1/012144&partnerID=40&md5=355e823a0876d653008f070eb394681b
Popis:	The electro- and magnetoresistivity of MoTe2 single crystals before and after quenching were measured at temperatures from 1.8 to 300 K and in magnetic fields of up to 9 T. It was demonstrated that quenching can lead to strong changes in values of the electro-and magneresistivity studied as well as in their temperature and field dependences. The peculiarities of these electronic transport characteristics changes were studied in detail. © Published under licence by IOP Publishing Ltd. The research was carried out within the state assignment of the Ministry of Education and Science of the Russian Federation (theme “Spin”, No. АААА-А18-118020290104-2), supported in part by RFBR (Project No. 17-52-52008) and the Government of Russian Federation (Decree No. 211, Contract No. 02.A03.21.0006).
Databáze:	OpenAIRE
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