Porous Silicon Preparation by Electrochemical Etching in Ionic Liquids

Autor: Valentine P. Ananikov, Evgeniya A. Saverina, M. V. Gorbachevskii, Mikhail A. Syroeshkin, Daria Yu. Zinchenko, Viatcheslav Jouikov, Mikhail P. Egorov, Alexey S. Galushko, Sofia D. Farafonova, Andrei A. Novikov
Přispěvatelé: Institut des Sciences Chimiques de Rennes (ISCR), Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA), ND Zelinsky Institute of Organic Chemistry [Moscow, Russia], Gubkin Russian State University, Russian Science Foundation (RSF) [17-73-20281], Ministry of Science and Higher Education of the Russian Federation [0768-2020-0007], Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
Rok vydání: 2020
Předmět:
Zdroj: ACS Sustainable Chemistry & Engineering
ACS Sustainable Chemistry & Engineering, American Chemical Society, 2020, 8 (27), pp.10259-10264. ⟨10.1021/acssuschemeng.0c03133⟩
ACS Sustainable Chemistry & Engineering, 2020, 8 (27), pp.10259-10264. ⟨10.1021/acssuschemeng.0c03133⟩
ISSN: 2168-0485
DOI: 10.1021/acssuschemeng.0c03133
Popis: International audience; Anodic etching of n-type {111} silicon in ionic liquid (IL) systems ([RMIM] [X], R = H, Bu; X = BF4-, PF6-), realized under galvanostatic conditions and at room temperature, allowed the formation of porous silicon surfaces with different pore morphology depending on the etching time, current density, and the IL used. The study of the effect of water content in IL on the etching process has shown a water content of 1% to be optimal. The role of the anion on the etching process was elucidated using 1-methylimidazolium tetrafluoroborate ([HMIM][BF4]) and 1-methylimidazolium hexafluorophosphate ([HMIM] [PF6]) IL systems. [HMIM] [BF4] was found to be most efficient for the formation of a silicon nanostructured array with a pore size of 30-80 nm. The thusprepared porous silicon samples show fluorescence in blue light (475 nm). The NMR spectra of [HMIM] [BF4] ionic liquid before and after etching do not show noticeable changes, which makes it possible to consider this IL as a potentially recyclable etching agent.
Databáze: OpenAIRE