A 96% Efficient High-Frequency DC–DC Converter Using E-Mode GaN DHFETs on Si
| Autor: | Puneet Srivastava, Stefaan Decoutere, M. Van Hove, Kai Cheng, Jordi Everts, J. Das, Maarten Leys, J. Van den Keybus, Denis Marcon, Gustaaf Borghs, Domenica Visalli, Johan Driesen |
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| Přispěvatelé: | Electrical Engineering, Electromechanics and Power Electronics |
| Rok vydání: | 2011 |
| Předmět: |
SPICE
Materials science power field-effect transistors (FETs) business.industry Transistor Wide-bandgap semiconductor ComputingMilieux_LEGALASPECTSOFCOMPUTING High voltage Gallium nitride Converters 500 kHz GaN Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound high voltage chemistry efficiency law Logic gate Boost converter Optoelectronics Figure of merit Electrical and Electronic Engineering business |
| Zdroj: | IEEE Electron Device Letters, 32(10), 1370-1372. Institute of Electrical and Electronics Engineers |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | III-Nitride materials are very promising to be used in next-generation high-frequency power switching applications. In this letter, we demonstrate the performance of normally off AlGaN/GaN/AlGaN double-heterostructure FETs (DHFETs) using a boost-converter circuit. The figures of merit of our large (57.6-mm gate width) GaN transistor are presented: $R_{rm ON} ast Q_{G}$ of 2.5 $Omegacdothbox{nC}$ is obtained at $V_{rm DS} = hbox{140 V}$. The switching performance of the GaN DHFET is studied in a dedicated high-frequency boost converter: both the switching times and power losses are characterized. We show converter efficiency values up to 96.1% at 500 kHz and 93.9% at 850 kHz at output power of 100 W. ispartof: IEEE Electron Device Letters vol:32 issue:10 pages:1370-1372 status: published |
| Databáze: | OpenAIRE |
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