Effect of a Balanced Concentration of Hydrogen on Graphene CVD Growth
| Autor: | Esther Pascual, Enric Bertran, J.L. Andújar, Stefanos Chaitoglou |
|---|---|
| Přispěvatelé: | Universitat de Barcelona |
| Rok vydání: | 2016 |
| Předmět: |
Copper substrate
Materials science Article Subject Hydrogen Grafè Annealing (metallurgy) chemistry.chemical_element Nanotechnology 02 engineering and technology Chemical vapor deposition 010402 general chemistry 01 natural sciences Methane law.invention chemistry.chemical_compound law lcsh:Technology (General) General Materials Science Hydrogen concentration Graphene Hidrogen 021001 nanoscience & nanotechnology Monolayer graphene 0104 chemical sciences chemistry Chemical engineering lcsh:T1-995 0210 nano-technology Deposició química en fase vapor |
| Zdroj: | Dipòsit Digital de la UB Universidad de Barcelona Journal of Nanomaterials, Vol 2016 (2016) Recercat. Dipósit de la Recerca de Catalunya instname |
| ISSN: | 1687-4129 1687-4110 |
| Popis: | The extraordinary properties of graphene make it one of the most interesting materials for future applications. Chemical vapor deposition (CVD) is the synthetic method that permits obtaining large areas of monolayer graphene. To achieve this, it is important to find the appropriate conditions for each experimental system. In our CVD reactor working at low pressure, important factors appear to be the pretreatment of the copper substrate, considering both its cleaning and its annealing before the growing process. The carbon precursor/hydrogen flow ratio and its modification during the growth are significant in order to obtain large area graphene crystals with few defects. In this work, we have focused on the study of the methane and the hydrogen flows to control the production of single layer graphene (SLG) and its growth time. In particular, we observe that hydrogen concentration increases during a usual growing process (keeping stable the methane/hydrogen flow ratio) resulting in etched domains. In order to balance this increase, a modification of the hydrogen flow results in the growth of smooth hexagonal SLG domains. This is a result of the etching effect that hydrogen performs on the growing graphene. It is essential, therefore, to study the moderated presence of hydrogen. |
| Databáze: | OpenAIRE |
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