Dual step EBL Gate fabrication technology for GaN-HEMT wideband applications
| Autor: | D. Dominijanni, P. Romanini, E. Giovine, Antonio Nanni, A. Pantellini, Marco Peroni, Andrea Notargiacomo |
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| Jazyk: | angličtina |
| Rok vydání: | 2011 |
| Předmět: |
Fabrication
Materials science business.industry Transistor Heterojunction Very high frequency High-electron-mobility transistor Condensed Matter Physics Atomic and Molecular Physics and Optics Microwave monolithic integrated circuits (MMICs) Surfaces Coatings and Films Electronic Optical and Magnetic Materials Dual (category theory) law.invention Electron beam lithography (EBL) law High electron mobility transistor (HEMT) T-Gate Hardware_INTEGRATEDCIRCUITS Optoelectronics Electronics Electrical and Electronic Engineering Wideband business |
| Zdroj: | Microelectronic engineering 88 (2011): 1927–1930. doi:10.1016/j.mee.2011.02.064 info:cnr-pdr/source/autori:D. Dominijanni (1), E. Giovine (1), A. Notargiacomo (1), A. Pantellini (2), P. Romanini (2), M. Peroni (2), A. Nanni (2)/titolo:Dual step EBL Gate fabrication technology for GaN-HEMT wideband applications/doi:10.1016%2Fj.mee.2011.02.064/rivista:Microelectronic engineering/anno:2011/pagina_da:1927/pagina_a:1930/intervallo_pagine:1927–1930/volume:88 |
| DOI: | 10.1016/j.mee.2011.02.064 |
| Popis: | The operation at frequencies above 100 GHz of electronic devices like transistors has been achieved both by using high electron mobility III-V semiconductor materials or heterostructures and by implementing fabrication techniques which strongly reduce parasitic capacitances between the device terminals, without increasing series resistances. The technology has been applied on different GaN high electron mobility transistor epiwafers, and the devices performances analyzed under their DC and RF characteristics, outlining that further semiconductor material optimization is mandatory to fully benefit the sub 1/4 micron Gate length for very high frequency operation advantage. (C) 2011 Elsevier B.V. |
| Databáze: | OpenAIRE |
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