MF-sputtered AZO for a-Si SHJ Solar Cells
| Autor: | Laurent Kroely, Sunah Park, Jan Jeurink, Florian Wagner, Winfried Wolke |
|---|---|
| Přispěvatelé: | Publica |
| Rok vydání: | 2014 |
| Předmět: |
Electron mobility
Materials science Silicon business.industry Annealing (metallurgy) chemistry.chemical_element Thermal treatment ZnO:Al law.invention Silicium-Photovoltaik Energy(all) transparent conductive oxide chemistry law Solar cell silicon hetero junction Optoelectronics PV Produktionstechnologie und Qualitätssicherung hetero junction solar cells vapour deposition business Modulintegration Transparent conducting film Specific resistance |
| Zdroj: | Energy Procedia. 55:777-785 |
| ISSN: | 1876-6102 |
| DOI: | 10.1016/j.egypro.2014.08.059 |
| Popis: | Silicon Hetero Junction (SHJ) structures and ZnO:Al (AZO) were deposited completely by high throughput industrial inline CVD and PVD deposition systems, respectively. A design of experiment of the AZO deposition parameters was carried out, to find suitable AZO layers for the use in SHJ solar cells. A subsequential thermal treatment on the AZO layers was performed to investigate their performance in a solar cell production. Thin AZO layers with the lowest specific resistance of 0.69 10-3 Ωcm were achieved with low T annealing. The highest carrier mobility of 22 cm2 V-1 s-1 was reached with high temperature annealing. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|