State of the Art 58W, 38% PAE X-Band AlGaN/GaN HEMTs Microstrip MMIC Amplifiers
| Autor: | Z. Ouarch, T. Dean, Tibault Reveyrand, Erwan Morvan, M. A. Di-Forte Poisson, Eric Chartier, Raphaël Aubry, N. Sarazin, D. Thenot, T. Bouvet, Jean-Claude Jacquet, Olivier Jardel, Sylvain Delage, D. Lancereau, Didier Floriot, Y. Gourdel, O. Drisse, Christian Dua, Audrey Martin, J.O. McLean, S. Bansropun, A.J. Hydes, Stéphane Piotrowicz, G. Lecoustre, M. Richard |
|---|---|
| Přispěvatelé: | Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Thales Research and Technology [Palaiseau], THALES, QINETIQ, QinetiQ, C2S2, XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2008 |
| Předmět: |
010302 applied physics
Materials science business.industry Amplifier Wide-bandgap semiconductor X band 020206 networking & telecommunications Gallium nitride Algan gan 02 engineering and technology 01 natural sciences Microstrip [SPI.TRON]Engineering Sciences [physics]/Electronics chemistry.chemical_compound chemistry 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics State (computer science) business ComputingMilieux_MISCELLANEOUS Monolithic microwave integrated circuit |
| Zdroj: | IEEE Compound Semiconductor IC Symposium CSICS 2008 IEEE Compound Semiconductor IC Symposium CSICS 2008, Oct 2008, United States. pp 1-4 |
| ISSN: | 1550-8781 |
| DOI: | 10.1109/csics.2008.39 |
| Popis: | This paper presents the results obtained on X-Band GaN MMICs developed in the frame of the Kerrigan project launched by the European Defense Agency. A new step was achieved, 58 W of output power with 38% PAE in X-Band were obtained using an 18 mm 2 2-stages amplifier. To our knowledge, these results present a new state-of-the-art of X-Band MMIC power amplifiers. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|