Computational Modeling of InGaAs/InP Single Photon Detector for High Sensitive Applications
| Autor: | Saud Alanzi, Ahmed C. Kadhim, Ahmad S. Azzahrani, Ahmad Alalyani |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Physics
Photon Dependency (UML) Physics::Instrumentation and Detectors business.industry Photon detector 02 engineering and technology Gating 021001 nanoscience & nanotechnology Avalanche photodiode High sensitive 01 natural sciences 010309 optics chemistry.chemical_compound chemistry Distortion 0103 physical sciences Optoelectronics 0210 nano-technology business Indium gallium arsenide |
| Zdroj: | ResearcherID |
| DOI: | 10.1364/fio.2018.jtu3a.52 |
| Popis: | An approached to define output current of single photon avalanche photodiode (SPAD) is introduced using a mathematical formula. The mathematical steps and derivations are shown that the dependency of SPAD on gating signals. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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