Passivation of Germanium by Graphene
| Autor: | Robert M. Jacobberger, Francesca Cavallo, Vijay Saradhi Mangu, Susmit Singha Roy, Max G. Lagally, Richard Rojas Delgado, Michael S. Arnold |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Passivation Inorganic chemistry chemistry.chemical_element Germanium 02 engineering and technology Chemical vapor deposition 010402 general chemistry 01 natural sciences law.invention symbols.namesake X-ray photoelectron spectroscopy law General Materials Science Graphene oxide paper business.industry Graphene 021001 nanoscience & nanotechnology 0104 chemical sciences chemistry symbols Optoelectronics 0210 nano-technology business Raman spectroscopy Graphene nanoribbons |
| Zdroj: | ACS Applied Materials & Interfaces. 9:17629-17636 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.7b03889 |
| Popis: | The oxidation of Ge covered with graphene that is either grown on or transferred to the surface is investigated by X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy. Graphene properly grown by chemical vapor deposition on Ge(100), (111), or (110) effectively inhibits room-temperature oxidation of the surface. When graphene is transferred to the Ge surface, oxidation is reduced relative to that on uncovered Ge but has the same power law dependence. We conclude that access to the graphene/Ge interface must occur via defects in the graphene. The excellent passivation provided by graphene grown on Ge should enhance applications of Ge in the electronic-device industry. |
| Databáze: | OpenAIRE |
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