Influence of N cluster states on band dispersion in GaInNAs quantum wells

Autor:	Eoin P. O'Reilly, S.B. Healy, A. Lindsay
Rok vydání:	2006
Předmět:	Tunnel effect Range (particle radiation) Materials science Condensed matter physics Impurity Dispersion (optics) Hydrostatic pressure Condensed Matter Physics Electronic band structure Atomic and Molecular Physics and Optics Quantum tunnelling Quantum well Electronic Optical and Magnetic Materials
Zdroj:	ResearcherID
ISSN:	1386-9477
DOI:	10.1016/j.physe.2005.12.048
Popis:	We use a modified band-anticrossing (BAC) model to investigate the band dispersion in a GaN x As 1 - x / AlGaAs quantum well (QW) as a function of hydrostatic pressure. The band edge mass increases considerably more quickly with pressure than in the case of a GaAs/AlGaAs QW, and the subband separation also decreases significantly. We predict that the strong anticrossing interaction between the GaAs host conduction band and isolated N levels will inhibit tunnelling through the QW for a range of energy above the isolated N levels. The energy of N resonant states depends strongly on details of the local environment, giving a broader calculated distribution of N states in GaInNAs compared to GaNAs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0a4ff2fc142166f2a3690779619e11db https://doi.org/10.1016/j.physe.2005.12.048 Zobrazit plný text záznamu Full Text from ScienceDirect