Photo-Induced Multiple-State Memory Behaviour in Non-Volatile Bipolar Resistive-Switching Devices
| Autor: | Jianjun Liu, Xuejiao Zhang, Bai Sun, Haixia Qiao, Zhiwei Xu, Yong Huang, Yanyan Cao, Xiaofeng Pang |
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| Rok vydání: | 2018 |
| Předmět: |
Hardware_MEMORYSTRUCTURES
Materials science business.industry Hydrothermal reaction Biomedical Engineering Nanoparticle Bioengineering 02 engineering and technology General Chemistry 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Tin oxide 01 natural sciences 0104 chemical sciences Semiconductor industry Resistive switching Optoelectronics General Materials Science State (computer science) 0210 nano-technology business |
| Zdroj: | Journal of Nanoscience and Nanotechnology. 18:2650-2656 |
| ISSN: | 1533-4880 |
| Popis: | The recent discovery of non-volatile resistive-switching memory is a promising phenomenon for the semiconductor industry and electronic device technology. In our work, CaWO4 nanoparticles were synthesised through a one-step hydrothermal reaction. A resistive-switching memory device with Ag/CaWO4/fluorine-doped tin oxide structure was prepared. This device presents photo-induced multiple-state memory behaviour at room temperature. This study is valuable for exploring multi-functional materials and their applications in photo-controlled multiple-state non-volatile memories. |
| Databáze: | OpenAIRE |
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