Optical patterning of GaN films
| Autor: | Oliver Ambacher, Martin Stutzmann, Roman Dimitrov, Michael K. Kelly, G. Groos, B. Dahlheimer, H. Angerer |
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| Zdroj: | Scopus-Elsevier |
| Popis: | Patterned etching of GaN films was achieved with laser‐induced thermal decomposition. High‐energy laser pulses are used to locally heat the film above 900 °C, causing rapid nitrogen effusion. Excess gallium is then removed by conventional etching. At exposures of 0.4 J/cm2 with 355 nm light, etch rates of 50–70 nm per pulse were obtained. Illumination with an interference grating was used to produce trenches as narrow as 100 nm. |
| Databáze: | OpenAIRE |
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